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Monday 6 January 2020

IDEAL DIODE

 IDEAL DIODE

IDEAL DIODE
IDEAL DIODE

The first electronic device to be introduced is called the diode. It is the simplest of
semiconductor devices but plays a very vital role in electronic systems, having characteristics that closely match those of a simple switch. It will appear in a range of applications, extending from the simple to the very complex. In addition to the details
of its construction and characteristics, the very important data and graphs to be found
on specification sheets will also be covered to ensure an understanding of the terminology employed and to demonstrate the wealth of information typically available from manufacturers.

The term ideal will be used frequently in this text as new devices are introduced.
It refers to any device or system that has ideal characteristics—perfect in every way.
It provides a basis for comparison, and it reveals where improvements can still be
made.
 IDEAL DIODE
  DIODE

Ideally, a diode will conduct current in the direction defined by the arrow in the
symbol and act like an open circuit to any attempt to establish current in the opposite direction. In essence:
The characteristics of an ideal diode are those of a switch that can conduct
current in only one direction.


IDEAL DIODE
Diode
IDEAL DIOD.

In general, it is relatively simple to determine whether a diode is in the region of conduction or nonconduction simply bynoting the direction of the current ID established by an applied voltage. For conventional flow (opposite to that of electron flow),
if the resultant diode current has the same direction as the arrowhead of the diode
symbol, the diode is operating in the conducting region as depicted

As indicated earlier, the primary purpose of this section is to introduce the characteristics of an ideal device for comparison with the characteristics of the commercial variety. As we progress through the next few sections, keep the following ques
tions in mind:
How close will the forward or “on” resistance of a practical diode compare
with the desired 0- level?
Is the reverse-bias resistance sufficiently large to permit an open-circuit ap-
proximation?


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